Статья

High-Performance Photoresistors Based on Perovskite Thin Film with a High PbI2 Doping Level

Jieni LiInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaHenan LiCollege of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, ChinaDong DingInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaZibo LiInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaFuming ChenSchool of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, ChinaYe WangKey Laboratory of Material Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, ChinaShiwei LiuInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaHuizhen YaoInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaLai LiuInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, ChinaYumeng ShiEngineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

2019en

ABI

Аннотация

We prepared high-performance photoresistors based on CH3NH3PbI3 films with a high PbI2 doping level. The role of PbI2 in CH3NH3PbI3 perovskite thin film was systematically investigated using scanning electron microscopy, X-ray diffraction, time-resolved photoluminescence spectroscopy, and photoconductive atomic force microscope. Laterally-structured photodetectors have been fabricated based on CH3NH3PbI3 perovskite thin films deposited using precursor solution with various CH3NH3I:PbI2 ratios. Remarkably, the introduction of a suitable amount of PbI2 can significantly improve the performance and stability of perovskite-based photoresistors, optoelectronic devices with ultrahigh photo-sensitivity, high current on/off ratio, fast photo response speed, and retarded decay. Specifically, a highest responsivity of 7.8 A/W and a specific detectivity of 2.1 × 1013 Jones with a rise time of 0.86 ms and a decay time of 1.5 ms have been achieved. In addition, the local dependence of photocurrent generation in perovskite thin films was revealed by photoconductive atomic force microscopy, which provides direct evidence that the presence of PbI2 can effectively passivate the grain boundaries of CH3NH3PbI3 and assist the photocurrent transport more effectively.

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Идентификаторы

DOI: 10.3390/nano9040505

Цитирования и источники

Цитирований: 2Использованных источников: 0

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