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Low energy ion scattering (LEIS). A practical introduction to its theory, instrumentation, and applications

Cody V. CushmanChemistry and Biochemistry, Brigham Young University, Provo, UT 84602, USAPhilipp BrünerION-TOF GmbH, Heisenbergstr. 15, 48149 Muenster, GermanyJulia ZakelION-TOF GmbH, Heisenbergstr. 15, 48149 Muenster, GermanyGeorge H. MajorChemistry and Biochemistry, Brigham Young University, Provo, UT 84602, USABarry M. LuntInformation Technology, Brigham Young University, Provo, UT 84602, USANicholas J. SmithScience and Technology Division, Corning Incorporated, Corning, NY 14831, USAThomas GrehlION-TOF GmbH, Heisenbergstr. 15, 48149 Muenster, GermanyMatthew R. LinfordChemistry and Biochemistry, Brigham Young University, Provo, UT 84602, USA
2016en
ABI

Аннотация

Low energy ion scattering (LEIS) probes the elemental composition of the outermost atomic layer of a material and provides static depth profiles of the outer ca. 10 nm of surfaces. Its extreme surface sensitivity and quantitative nature make it a powerful tool for studying the relationships between surface chemistry and surface related phenomena such as wetting, adhesion, contamination, and thin film growth. The high depth resolution obtained in LEIS in its static and sputter depth profile modes are useful for studying the layer structures of thin films. LEIS instrumentation has improved significantly in recent years, showing dramatic increases in its sensitivity and further expanding its potential applications. In this article, we provide a practical introduction to the technique, including a discussion of the basic theory of LEIS, LEIS spectra, LEIS instrumentation, and LEIS applications, including catalysts, solid oxide fuel cells (SOFCs), and thin films in integrated circuits.

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