Electronic structure of β-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">FeSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
N. E. ChristensenInstitute of Physics, Aarhus University, DK-8000 Aarhus C, Denmark
1990lv
ABI
Аннотация
Ab initio calculations of the electronic structure of \ensuremath{\beta}-${\mathrm{FeSi}}_{2}$ show that this material, in agreement with experiment, is a semiconductor. The calculated hole and electron masses of the band-edge states are \ensuremath{\simeq}0.8${\mathit{m}}_{0}$. A particularly strong coupling of the band-edge states to the lattice is suggested. This may cause the mobilities, even in pure \ensuremath{\beta}-${\mathrm{FeSi}}_{2}$ samples, to be very low at ambient temperature.
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