Thermoelectric properties of heavily Co-doped β-FeSi2
Jun ChengCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaLu GanMaterials Genome Institute, Shanghai University, Shanghai 200444, ChinaJiawei ZhangCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaJinyang XiMaterials Genome Institute, Shanghai University, Shanghai 200444, ChinaLili XiMaterials Genome Institute, Shanghai University, Shanghai 200444, ChinaJiong YangMaterials Genome Institute, Shanghai University, Shanghai 200444, ChinaTingting DengSchool of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, ChinaPengfei QiuCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaXun ShiCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaLidong ChenCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
2024en
ABI
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