Статья

High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction

Kaiwen GongSchool of Science, Xi’an Polytechnic University, Xi’an 710048, PR ChinaLianbi LiSchool of Science, Xi’an Polytechnic University, Xi’an 710048, PR ChinaWenzhi YuInstitute of Physics, Chinese Academy of Science, Beijing 100190, PR ChinaHaoran MuSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaJian YuanSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaRan HaoChina Jiliang University, College of Optical and Electronic Technology, Hangzhou 310018, PR ChinaBaiquan LiuSchool of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, PR ChinaZengxia MeiSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaLuyao MeiSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaHaozhe LiSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR ChinaShenghuang LinSongshan Lake Materials Laboratory, Dongguan, Guangdong 523808, PR China

2023en

ABI

Аннотация

Heterojunction photodetectors based on 2D materials are a promising geometry to acquire broadband photodetection with combination of wide-bandgap and narrow bandgap functional materials. But the interface condition of the heterojunction is difficult to control due to the inevitable introduction of air bubbles and wrinkles. In this paper, a synthesis method merging exfoliation and CVD is reported to fabricate photodetectors of the GaSe/PtSe2 heterojunction. The devices present the highest responsivity and detectivity of about 1.7 A/W and 3.51 × 1012 Jones at a −10 V bias under the avalanche mode, respectively. Also, a fast response time could be obtained around 20 μs. In addition, the photodetector exhibits a clear photovoltaic effect, which can work in a self-powered mode.

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Идентификаторы

DOI: 10.1016/j.matdes.2023.111848

Цитирования и источники

Цитирований: 2Использованных источников: 0

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