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NO2 gas sensor based on hydrogenated graphene

Sungjin ParkDepartment of Physics, Yonsei University 1 , Seoul 03722, South KoreaMinji ParkDepartment of Physics, Yonsei University 1 , Seoul 03722, South KoreaSunghyun KimDepartment of Physics, Yonsei University 1 , Seoul 03722, South KoreaSum-Gyun YiDepartment of Physics, Yonsei University 1 , Seoul 03722, South KoreaMyeongjin KimDepartment of Physics, Yonsei University 1 , Seoul 03722, South KoreaJangyup SonDepartment of Materials Science and Engineering, Yonsei University 2 , Seoul 03722, South KoreaJongin ChaDepartment of Materials Science and Engineering, Yonsei University 2 , Seoul 03722, South KoreaJongill HongDepartment of Materials Science and Engineering, Yonsei University 2 , Seoul 03722, South KoreaKyung‐Hwa YooDepartment of Physics, Yonsei University 1 , Seoul 03722, South Korea
2017en
ABI

Аннотация

We investigated the relationship between defects in graphene and NO2 gas sensitivity of graphene-based gas sensors. Defects were introduced by hydrogen plasma or ultraviolet (UV)/ozone treatment. As the defect concentration increased, the sensitivity was enhanced, and sub-ppb level detection limit was achieved. UV irradiation was used for recovery at room temperature. However, defects generated by ozone treatment, like graphene oxide, were reduced back to graphene by UV irradiation, so the ozone-treated graphene sensor was not stable over time. In contrast, the response of the hydrogenated graphene sensor was very repeatable because defects generated by hydrogenation was stable enough not to be dehydrogenated by UV irradiation. These results demonstrate that the hydrogenated graphene sensor is a highly sensitive and stable NO2 sensor at room temperature.

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