Organic nonvolatile memory devices with charge trapping multilayer graphene film
Yongsung JiSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, KoreaMinhyeok ChoeSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, KoreaByungjin ChoSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, KoreaSunghoon SongSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, KoreaJongwon YoonSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, KoreaHeung Cho KoSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, KoreaTakhee LeeDepartment of Physics and Astronomy, Seoul National University, Seoul 151-742, Korea
2012en
ABI
Аннотация
We fabricated an array-type organic nonvolatile memory device with multilayer graphene (MLG) film embedded in polyimide (PI) layers. The memory devices showed a high ON/OFF ratio (over 10(6)) and a long retention time (over 10(4) s). The switching of the Al/PI/MLG/PI/Al memory devices was due to the presence of the MLG film inserted into the PI layers. The double-log current-voltage characteristics could be explained by the space-charge-limited current conduction based on a charge-trap model. A conductive atomic force microscopy found that the conduction paths in the low-resistance ON state were distributed in a highly localized area, which was associated with a carbon-rich filamentary switching mechanism.
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