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Towards 26% efficiency in inverted perovskite solar cells <i>via</i> interfacial flipped band bending and suppressed deep-level traps

Yiting ZhengFuture Energy Research Institute of Shanghai, Contemporary Amperex Technology Co. Limited (CATL), Shanghai, 200240, P. R. ChinaYaru LiFuture Energy Research Institute of Shanghai, Contemporary Amperex Technology Co. Limited (CATL), Shanghai, 200240, P. R. ChinaRongshan ZhuangSchool of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. ChinaXueyun WuSchool of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. ChinaCongcong TianSchool of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. ChinaAnxin SunSchool of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. ChinaChen ChenFuture Energy Research Institute of Shanghai, Contemporary Amperex Technology Co. Limited (CATL), Shanghai, 200240, P. R. ChinaYongsheng GuoFuture Energy Research Institute of Shanghai, Contemporary Amperex Technology Co. Limited (CATL), Shanghai, 200240, P. R. ChinaYong HuaYunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650091, P. R. ChinaKe MengFuture Energy Research Institute of Shanghai, Contemporary Amperex Technology Co. Limited (CATL), Shanghai, 200240, P. R. ChinaKai WuFuture Energy Research Institute of Shanghai, Contemporary Amperex Technology Co. Limited (CATL), Shanghai, 200240, P. R. ChinaChun‐Chao ChenFuture Energy Research Institute of Shanghai, Contemporary Amperex Technology Co. Limited (CATL), Shanghai, 200240, P. R. China
2023en
ABI

Аннотация

Minimizing interfacial recombination loss in inverted perovskite solar cells is achieved by introducing piperazinium diiodide (PDI) as a surface modifier to passivate deep surface defects and adjust the interface band bending.

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