Статья

Comparative Study of Different Perovskite Active Layers for Attaining Higher Efficiency Solar Cells: Numerical Simulation Approach

Sagar BhattaraiDepartment of Physics, Arunachal University of Studies, Namsai 792103, IndiaMustafa K. A. MohammedCollege of Engineering, University of Warith Al-Anbiyaa, Karbala 56001, IraqJaya MadanVLSI Centre of Excellence, Chitkara University Institute of Engineering and Technology, Chitkara University, Punjab 140401, IndiaRahul PandeyVLSI Centre of Excellence, Chitkara University Institute of Engineering and Technology, Chitkara University, Punjab 140401, IndiaAbdelkader HimaDepartment of Electrical Engineering, University of El Oued, El Oued 39000, AlgeriaLamia Ben FarhatDepartment of Chemistry, College of Sciences, King Khalid University, Abha P.O. Box 9004, Saudi ArabiaMongi AmamiDepartment of Chemistry, College of Sciences, King Khalid University, Abha P.O. Box 9004, Saudi ArabiaM. Khalid HossainDepartment of Advanced Energy Engineering Science, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 816-8580, Japan

2023en

ABI

Аннотация

The simulated device structures of ITO/ZnO/Perovskite absorber layers (PAL)/Spiro-OMeTAD/Au with distinct absorbers were modeled and investigated using solar cell capacitance simulator (SCAPS-1D) simulating software (version 3.8). The primary objective is to enhance the thermal stability of the solar device. As the absorber thickness and temperature impact PV performance parameters, thus main aim of this work is to determine the optimum thickness of PAL as well as the temperature affectability on the PV performance of the cells. It was also observed that the maximum PV parameters (among the cells under consideration), viz. 29% PCE, are achieved with the formamidinium tin iodide (FASnI3) at the thickness of 600 nm. Similarly, the temperature of 300 K shows a much-improved efficiency offering nearly 29%. Further, the external quantum efficiency (EQE) and J-V also confirm the determent of the more stable, lead-free, FASnI3-based device, which can provide an effective way to develop highly efficient, low-cost solar cell devices.

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Идентификаторы

DOI: 10.3390/su151712805

Цитирования и источники

Цитирований: 4Использованных источников: 0

Показатели — AkademScholar