Density of states of the two-dimensional electron gas studied by magnetocapacitances of biased double-barrier structures
Houzhi ZhengNational Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, P.O. Box 912, Beijing 100083, ChinaAimin SongNational Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, P.O. Box 912, Beijing 100083, ChinaFuhua YangNational Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, P.O. Box 912, Beijing 100083, ChinaYue-xia LiNational Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, P.O. Box 912, Beijing 100083, China
1994en
ABI
Аннотация
The magnetocapacitive response of a double-barrier structure (DBS), biased beyond resonances, has been employed to determine the density of states (DOS) of the two-dimensional electron gas residing in the accumulation layer on the incident side of the DBS. An adequate procedure is developed to compare the model calculation of the magnetocapacitance with the experimental C vs B curves measured at different temperatures and biases. The results show that the fitting is not only self-consistent but also remarkably good even in well-defined quantum Hall regimes. As a result, information about the DOS in strong magnetic fields could reliably be extracted.
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