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Effect of Solution Concentrations on the Structural, Morphological, Optical, and Electrical Properties of SnO2:F Thin Films Prepared by Spray Pyrolysis Method

L. AbbouraMaterials Technology Department, Faculty of Physics, USTO-MB, El Mnaouar Bir El Djir, BP 1505, 31000, Oran, AlgeriaA. DjelloulCentre de Recherche en Technologie des Semi-Conducteurs pour l’Energétique (CRTSE), 02 Bd Frantz Fanon, BP 140, 7 Merveilles, 16000, Algiers, AlgeriaYamna BakhaP-MEMS, Centre de Développement des Technologies Avancées (CDTA), cité du 20 août 1956 Baba Hassen, BP 16081, Alger, AlgérieM’hamed GuezzoulLaboratory of Materials (LABMAT), National Polytechnique School of Oran Maurice Audin (ENPO-MA), Oran Mnaouar, BP 1523, Oran, AlgeriaAmarsingh Bhabu KanagarajDepartment of Condensed Matter Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences (SIMATS), 602 105, Chennai, Tamil Nadu, IndiaM. AdnaneMaterials Technology Department, Faculty of Physics, USTO-MB, El Mnaouar Bir El Djir, BP 1505, 31000, Oran, Algeria
2025en
ABI

Аннотация

Fluorine-doped tin dioxide (SnO2:F) films were deposited onto glass substrates using a facile spray pyrolysis method. The effect of solution concentrations on the structural, morphological and optical properties of SnO2:F films is investigated using various characterization studies. All films exhibited tetragonal rutile structures with a preferred orientation in the (110) plane, which changes to the (211) plane gradually with increasing solution concentration. The average crystallite size of SnO2:F films decreased as the solution concentration increased, ranging from 40.29 to 38.05 nm. Atomic Force Microscopy (AFM) analyses revealed a marked improvement in grain distribution with increasing solution concentration, accompanied by a corresponding enhancement in surface pressure and decreased roughness. All the regions, produced samples exhibited high transparency from 70 to 82%. The SnO2:F (0.4 mol/L) film has the best transparency (≈82%). The band gap values of SnO2:F films with different solution concentrations (0.2, 0.3, and 0.4 mol/L) are 3.84, 3.93 and 3.97 eV respectively, with a high band gap of 3.97 eV for the SnO2:F (0.4 mol/L) films. Hot probe studies reveal that all films exhibit n-type conductivity. The lowest resistivity of 8.4 × 10–4 Ohm cm was found for films deposited at 0.4 mol/L. The figure of merit ( $${{\phi }_{{{\text{TC}}}}}$$ ) of SnO2:F thin films revealed a maximum value of about 9.757 × 10–3 Ohm–1 at the wavelength of 500 nm. These results suggest that SnO2:F films fabricated by spray pyrolysis can be considered effective candidates for integration into optoelectronic devices, particularly as transparent conductive layers in photovoltaic applications.

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