Changes in the Electrical Properties OF Cdte Thin Films Under the Influence OF Γ -Irradiation AT Different Times
B.Eh. TuraevTashkent University of Applied Sciences , 1 Gavkhar Street , Tashkent 100149 . Uzbekistan Denov Institute of Entrepreneurship and Pedagogy , 360 Sharof Rashidov Street , Denau , Surxondaryo 190507 . UzbekistanH. I. (Husniddin) AliqulovTashkent University of Applied Sciences , 1 Gavkhar Street , Tashkent 100149 . Uzbekistan Denov Institute of Entrepreneurship and Pedagogy , 360 Sharof Rashidov Street , Denau , Surxondaryo 190507 . UzbekistanT. (Tursunov) ShokirTashkent University of Applied Sciences , 1 Gavkhar Street , Tashkent 100149 . Uzbekistan Denov Institute of Entrepreneurship and Pedagogy , 360 Sharof Rashidov Street , Denau , Surxondaryo 190507 . Uzbekistan
ABI
Аннотация
A CdTe coating with a thickness of 200 μm, formed on the surface of a substrate (Mo) by thermal evaporation under high vacuum conditions, was studied. The CdTe coating was annealed at 10600C for 30 minutes under high vacuum, then irradiated with γ-rays at different times using a Co60 radioactive source. As a result of γ-irradiation, it was found that the CdTe crystal size (D) decreased from 60 nm to 2 nm, and the number of dislocations (δ) increased from 2.7*1010 to 1*1015cm-2.It was found that the I-U ratio of the CdTe crystal (U) decreases from (I)-1*10-7A to 7.41*10-10A at -5 V. It has been determined that the crystal structure of CdTe changes significantly after γ-irradiation.
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