Статья

SiO2/Si(100) interface studied by Al <i>K</i>α x-ray and synchrotron radiation photoelectron spectroscopy

Zhaoming LuInstitute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada K1A 0R9M. J. GrahamInstitute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada K1A 0R9Dawei JiangDepartment of Chemistry, University of Western Ontario, Canada N6A 5B7K. H. TanDepartment of Chemistry, University of Western Ontario, Canada N6A 5B7

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ABI

Аннотация

Both synchrotron radiation photoemission spectroscopy (PES) and Al Kα photoelectron spectroscopy (XPS) are used to determine the suboxide distribution at SiO2/Si (100) interfaces. High resolution PES measurements clearly resolved various suboxides with chemical shifts of 0.97, 1.80, and 2.60 eV for Si+1, Si+2, and Si+3, respectively. A total of 9.3×1014 atoms cm−2 of suboxide is found by PES measurements while only 4.2×1014 atoms cm−2 is measured by XPS on the same sample. This discrepancy is neither caused, as previously believed, by a difference in SiO2/Si (100) quality nor by a difference in methodology in data analysis. The possible factors, e.g., electron mean-free path and photoionization cross section, which contribute to the difference between PES and XPS data, are considered.

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Идентификаторы

DOI: 10.1063/1.110279

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