А. И. Иванов

2 та иш

Ioffe Physicotechnical Institute RAS

1. Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

   R. V. Parfeniev, I. I. Farbshteǐn, I. L. Shul’pina +5

   МақолаPhase-change materials and chalcogenidesMaterials science forum20001 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.654952

2. Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

   R. Job, W. R. Fahrner, A. Ulyashin +3

   МақолаSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000145