N. V. Abrosimov

3 та иш

Leibniz Institute for Crystal Growth D‐12489 Berlin Germany

1. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

   N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

   МақолаMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.326849

2. Positron probing of disordered regions in neutron‐irradiated silicon

   N.Yu. Arutyunov, Nick S. Bennett, Neil M. Wight +4

   МақолаMuon and positron interactions and applicationsphysica status solidi (b)20161 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.572515

3. SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions

   A. M. Emel’yanov, Н. А. Соболев, T. M. Mel’nikova +1

   МақолаSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000109