A. I. Nikiforov
1 та иш
Institute of Semiconductor Physics, Siberian Department of the Russian Academy of Sciences, Novosibirsk, Russia
Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method
Х. Б. Ашуров, Flyura Djurabekova, С. Е. Максимов +3
МақолаIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20110 иқтибосABI