H. Matyakubov

1 та иш

1. The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4

   A.E. Atamuratov, U.A. Aminov, Z.A. Atamuratova +3

   МақолаSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20150 иқтибос

   ABIABI:AkademIndex/openalex/2015.article.000894