Boon Teik Chan

1 та иш

B-3001 Leuven

1. Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration

   Ivan Zyulkov, Е. Н. Воронина, Mikhail Krishtab +6

   МақолаSemiconductor materials and devicesMaterials Advances20200 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.000426