A. G. Zabrodskiĭ

1 та иш

Ioffe Physicotechnical Institute RAS 194021 St. Petersburg Russia

1. Model of DC Tunneling Conductivity via Hydrogen‐Like Impurities in Heavily Doped Compensated Semiconductors

   N. A. Poklonski, I. I. Anikeev, С. А. Вырко +1

   МақолаSemiconductor Quantum Structures and Devicesphysica status solidi (b)20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.002495