M. Yu. Fominskii

1 та иш

Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009, Moscow, Russia

1. Structure of Aluminum Films for the Creation of Tunnel Junctions

   М. В. Стрелков, A. M. Chekushkin, A. A. Lomov +3

   МақолаSurface and Thin Film PhenomenaJournal of Communications Technology and Electronics20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.012180