Quantum size effect in antimony-doped bismuth films
Yu. F. KomnikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRE. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRYu. V. NikitinPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
ABI
Аннотация
The quantum oscillations in the resistance of pure bismuth films were studied before and after deposition of a thin antimony film and a homogenizing annealing. The period of the quantum oscillations in the resistance increases from ∼260 to ∼650 Å as the antimony is added, in accordance with a change in the parameters of the electron energy spectrum in bismuth antimony alloys.
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