Electrical and optical properties of the magnetic semiconductor MnTe
Yu. V. PereverzevPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRL. V. PovstyanyiPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRA. I. ZvyaginPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
ABI
Аннотация
The electrical and optical properties of the antiferromagnetic semiconductor MnTe (TN =307°K) are investigated in the temperature interval 4.2−350°K. The temperature dependence of the electrical resistivity ρ(T) is calculated allowing for carrier scattering by magnons and optical and acoustic phonons and also for “drag” effects. It is shown that the resistivity is due primarily to optical phonons. The calculated and experimental curves are in good agreement up to TN.
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