Features of the resistive state of thin aluminum films
V. M. SvistunovDonetsk Physicotechnical Institute, Academy of Sciences of the Ukrainian SSRMikhail BelogolovskiiDonetsk Physicotechnical Institute, Academy of Sciences of the Ukrainian SSRV. Yu. TarenkovDonetsk Physicotechnical Institute, Academy of Sciences of the Ukrainian SSRV. V. StupakovDonetsk Physicotechnical Institute, Academy of Sciences of the Ukrainian SSRE. D. NemchenkoDonetsk Physicotechnical Institute, Academy of Sciences of the Ukrainian SSR
ABI
Аннотация
The features of the current-voltage characteristics of thin aluminum films with tungsten oxide impurities have been investigated experimentally. The effect of microwave radiation on the dynamic conductivity of these specimens has been studied.
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