Flux redistribution of channeled fast electrons
Д. Е. ПоповInstitute of Nuclear Physics, Tomsk Polytechnical InstituteV. V. KaplinInstitute of Nuclear Physics, Tomsk Polytechnical InstituteS.A. VorobievInstitute of Nuclear Physics, Tomsk Polytechnical Institute
ABI
Аннотация
Abstract The orientation dependence of planar channeling for 0.5 to 2.5 MeV electron transmission through crystalline Si is experimentally observed. The phenomenon of spatial flux redistribution results from the formation of bound states of the channeled electrons with atomic planes. Application of electron channeling is considered for the control of irradiation effects in crystals and the study of perfection of the crystalline structure.
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