Localization effects in bismuth films in a weak magnetic field
Yu. F. KomnikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovE. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovА. В. БутенкоPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovВ. В. АндриевскииPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI
Аннотация
The magnetoresistance of thin (L ∼ 95–200 Å) bismuth films in a weak magnetic field, oriented perpendicular or parallel to the plane of the films, is investigated. The magnetoresistance, due to localization of electrons, increases quadratically with increasing magnetic field. A sharp anisotropy effect is observed: The magnitude of the localization correction in the perpendicular field is almost an order of magnitude greater than in the parallel field. These results agree well with the theory of localization of electrons in two-dimensional systems. The temperature dependence of the inelastic relaxation time of electrons is discussed.
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