Range and spatial distribution of ion-implanted impurities in glasses
A.A. Deshkovskaya
Minsk Radiotechnical Institute, USSRA. F. Burenkov
Minsk Radiotechnical Institute, USSR;
Institute of Applied Physics Problems, Belorussian State University, USSRФ. Ф. Комаров
Minsk Radiotechnical Institute, USSR;
Institute of Applied Physics Problems, Belorussian State University, USSR
ABI
Аннотация
Abstract The parameters of spatial distribution of B+, P+, N+, O+, Ar+, As+ and Sb+ implanted impurities have been determined within a wide energy range of 30–1000 keV for soda-lime glasses with the composition 1Na2O-4SiO2. The calculated values ([Rcirc] p , Δ[Rcirc] p , Sk) agree well with the experimental results.
Ҳали таржима қилинмаган
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
0 та иқтибос8 та фойдаланилган манба
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