Electron localization and conductivity of discontinuous bismuth films
А. В. БутенкоPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovE. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. V. PilipenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI
Аннотация
We report an anomalous positive magnetoresistance observed in thin discontinuous bismuth films in a magnetic field 1 <H < 17 kOe, which is well described by weak localization theory. It is found that the quantity ΔR/R is independent of the total resistance of the samples. The two-dimensional analog of the specific resistivity, R□, is the same for samples of various thicknesses near the current threshold, while the total resistance changes by almost two orders of magnitude, depending on the geometry of the conducting path.
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