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Transformation of sound at the solid helium–He II interface: features of the growth of quantum crystals

N. E. DyuminPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. N. Grigor’evPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovS. V. SvatkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI

Аннотация

The features of the growth of hcp 4He crystals have been studied under conditions when the basal plane is perpendicular to the crystal growth direction. Information on the kinetic crystal growth coefficient was obtained from results of measurements of the temperature dependence of the transformation coefficient of first into second sound at the hcp 4He–He II interface in the temperature range 1.4−0.9 K at an oscillation frequency ∼10 kHz. It was found that a transition from classical behavior of the crystal growth coefficient to quantum takes place at T ∼ 1.3 K. It was established that the area of the atomically smooth section on the basal plane below the faceting temperature increases linearly with decreasing temperature.

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