Configurational relaxation and the thermal conductivity of solid H2 with a small ortho-modification content
B. Ya. GorodilovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovI. N. KrupskiĩPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovV. G. ManzheiĭPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovO. A. KorolyukPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI
Аннотация
Results are given of measurements of the thermal conductivity of single-crystal specimens of solid hydrogen with ortho-modification content from 0.21 to 4.4% in the temperature range 1.4–11° K. An effect was found ofclustering of the ortho-molecules on the thermal conductivity. The relaxation time of the ortho-subsystem was determined in the temperature range 1.5–3° K. It follows from the results obtained the thermal resistivity of the crystals, associated with that scattering of phonons by the ortho-subsystem with random distribution of ortho-molecules in the lattice up to 0.21% o–H2, is proportional to x2T−3.
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