Ушбу иш иқтибос қилган ишлар

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Иш: Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

1. Физика и техника полупроводников

   в.а. Спектр осцилляций де-Гааза-ван-Альфена резко

   Мақола198311 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.353610

2. Epitaxial growth of silicon assisted by ion implantation

   Tadatsugu Itoh, Tohru Nakamura

   Мақола19713 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.647999

3. The experimental and computer studies of the double-scattering effect for polycrystals

   L. L. Balashova, Е. С. Машкова, V. A. Molchanov +1

   Мақола19832 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603679

4. Role of ions in ion-based film formation

   Toshiyuki Takagi

   Мақола19822 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603683

5. Ion-based growth of special films: Techniques and mechanisms

   Christian Weißmantel

   Мақола19822 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603687

6. Epitaxial growth of Si on (1012) Al2O3 by partially ionized vapor deposition

   Saburo Shimizu, S. Komiya

   Мақола19802 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.650983

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.650982

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.650984

9. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.650985

10. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.650986

11. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.650987