Reflection of second sound at a bcc 4He–He II interface
N. E. DyuminPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovV. N. Grigor’evPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovS. V. SvatkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI
Аннотация
The reflection coefficient for second sound at a bcc 4He–He II interface has been measured. It is shown that such an interface has high mobility and the calculated value of the crystal growth coefficient is given by a temperature dependence close to eΔp/T.
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