Polaron effects and quantum interference in resonance tunneling of electrons
L. I. GlazmanInstitute of Technology, Microelectronics and High-purity Materials, Academy of Sciences of the USSR, Chernogolovka 1R. I. ShekhterPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov 2
ABI
Аннотация
The problem of resonance tunneling of an electron through a double-barrier system is solved for an arbitrary value of interaction between the electron and the lattice in the interbarrier region. It is shown that the tunneling of an electron wave across the “cavity” formed by the barriers is accompanied by a dynamic evolution of hybridized electron-phonon states of polaron type. The calculated data can be applied to interpret the experimental results on low-temperature resonance tunneling.
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