Ушбу иш иқтибос қилган ишлар

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Иш: Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

1. Сарлавҳасиз

   Бошқа3 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.646501

2. Properties of Sn-doped GaAs

   Jun‐ichi Nishizawa, Satoshi Shinozaki, Katsuhiko Ishida

   Мақола19732 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659269

3. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659268