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Effect of orientational diffusion on the formation of H-bonded phenol complexes in an argon matrix

А. М. ПлохотниченкоB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, 310164, KharkovAlexander Yu. IvanovB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, 310164, KharkovE. D. RadchenkoB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, 310164, KharkovG.G. SheinaB. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, 310164, KharkovYu. P. Blagoı̆B. I. Verkin Physicotechnical Institute of Low Temperatures, Ukrainian Academy of Sciences, 310164, Kharkov
Low Temperature Physicsjournal1993en
ABI

Аннотация

The concentration dependence of IR spectra of phenol and diphenols in an argon matrix at T = 12 K is studied as well as the effect of sample annealing at a temperature 25–30 K on the band intensity of isolated molecules and H-bonded homoassociates. The influence of diffusion on the formation of complexes is studied and a simple quantitative model is constructed that makes it possible to determine the fraction of H-bonded complexes of different compositions in the sample for different concentrations of molecules having a high orientational mobility in the matrix. It is shown that dimers predominate among the H-bonded complexes of these molecules for matrix dilutions down to 1:100 on account of a strong dependence of the orientational mobility of complexes on their size. Integral extinctions of the valence vibration bands of free and H-bonded OH-groups of phenols in the Ar matrix are calculated.

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