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5 та иш

Иш: High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

  1. Theory of Radiation

    J.C. Gunn

    Мақола19555 иқтибос
    ABI

  2. Computer simulation of the sputtering of polyatomic multilayered materials with consideration of the spatial overlapping of the collision cascades

    Yu. V. Trushin, B.Ja. Ber, Vladimir S. Kharlamov +1

    Мақола19962 иқтибос
    ABI

  3. Molecular dynamics calculations of defect energetics in β-SiC

    Hanchen Huang, Nasr M. Ghoniem

    Мақола19942 иқтибос
    ABI

  4. Formation of Buried Layers of (SiC)<sub>1-x</sub>(AINT)<sub>x</sub> in 6H-SiC Using Ion-Beam Synthesis

    R.A. Yankov, N. Hatzopoulos, W. Fukarek +4

    Мақола19962 иқтибос
    ABI

  5. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI