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Иш: Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor
Correlating the Radiation Response of MOS Capacitors and Transistors
P.S. Winokur, J.R. Schwank, P. J. McWhorter +2
Мақола19842 иқтибосABIA reliable approach to charge-pumping measurements in MOS transistors
G. Groeseneken, H.E. Maes, N. Beltran +1
Мақола19842 иқтибосABI