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Иш: New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon
Molecular-dynamics study of defect formation in<i>a</i>-Si:H
Young K. Park, Charles W. Myles
Мақола19952 иқтибосABIAb initio pseudopotential calculations of point defects and boron impurity in silicon
Jing Zhu, Lin Yang, C. Mailhiot +2
Мақола19952 иқтибосABI