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Ушбу иш иқтибос қилган ишлар

23 та иш

Иш: New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

  1. Reversible conductivity changes in discharge-produced amorphous Si

    D. L. Staebler, C. R. Wroński

    Мақола19779 иқтибос
    ABI

  2. A new semiempirical electronic structure and total energy calculation method for solids and large molecules

    Z. M. Khakimov

    МақолаAdvanced Chemical Physics StudiesComputational Materials Science19948 иқтибос
    ABI

  3. Simplified LCAO Method for the Periodic Potential Problem

    J. C. Slater, G. F. Koster

    Мақола19546 иқтибос
    ABI

  4. The electrical properties of sulphur in silicon

    S. D. Brotherton, Micháel J. King, G.J. Parker

    Мақола19816 иқтибос
    ABI

  5. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

    M. Stutzmann, W. B. Jackson, C. C. Tsai

    Мақола19855 иқтибос
    ABI

  6. (110) surface atomic structures of covalent and ionic semiconductors

    D. J. Chadi

    Мақола19795 иқтибос
    ABI

  7. Negative-U Properties for Point Defects in Silicon

    G. D. Watkins, John R. Troxell

    Мақола19805 иқтибос
    ABI

  8. Theory of the silicon vacancy: An Anderson negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>U</mml:mi></mml:math>system

    G. A. Baraff, E. O. Kane, Michael Schlüter

    Мақола19805 иқтибос
    ABI

  9. Transferable tight-binding models for silicon

    I. Kwon, R. Biswas, C. Z. Wang +2

    Мақола19944 иқтибос
    ABI

  10. Generating Transferable Tight-Binding Parameters: Application to Silicon

    L. Goodwin, A Skinner, D. G. Pettifor

    Мақола19894 иқтибос
    ABI

  11. Microscopic Theory of Atomic Diffusion Mechanisms in Silicon

    Roberto Car, Paul J. Kelly, Atsushi Oshiyama +1

    Мақола19843 иқтибос
    ABI

  12. Barrier to Migration of the Silicon Self-Interstitial

    Yaneer Bar-Yam, John D. Joannopoulos

    Мақола19843 иқтибос
    ABI

  13. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair

    G. D. Watkins

    Мақола19673 иқтибос
    ABI

  14. High-resolution studies of sulfur- and selenium-related donor centers in silicon

    Erik Janzén, R. Stedman, G. Grossmann +1

    Мақола19843 иқтибос
    ABI

  15. Computer Modelling of Electronic and Atomic Processes in Solids

    Китоб19972 иқтибос
    ABI

  16. Ion-solid interactions for materials modification and processing

    D. B. Poker, D. Ila, Yaxiong Cheng +2

    Мақола19962 иқтибос
    ABI

  17. Theory of Enhanced Migration of Interstitial Aluminum in Silicon

    G. A. Baraff, M. Schlüter, G. Allan

    Мақола19832 иқтибос
    ABI

  18. DEFECT METASTABILITY IN HYDROGEN PASSIVATED POLYCRYSTALLINE SILICON

    N. H. Nickel, W. B. Jackson, N. M. Johnson

    Мақола19942 иқтибос
    ABI

  19. DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL

    David Redfield

    Мақола19912 иқтибос
    ABI

  20. Role of hydrogen complexes in the metastability of hydrogenated amorphous silicon

    W. B. Jackson

    Мақола19902 иқтибос
    ABI

  21. Molecular-dynamics study of defect formation in<i>a</i>-Si:H

    Young K. Park, Charles W. Myles

    Мақола19952 иқтибос
    ABI

  22. Ab initio pseudopotential calculations of point defects and boron impurity in silicon

    Jing Zhu, Lin Yang, C. Mailhiot +2

    Мақола19952 иқтибос
    ABI

  23. <i>Ab initio</i>calculations on metastable defects in a-Si:H: The Staebler-Wronski effect

    R. Jones, G M S Lister

    Мақола19902 иқтибос
    ABI