Ушбу иш иқтибос қилган ишлар

4 та иш

Иш: Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

1. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

   D. V. Lang

   Мақола19749 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.424573

2. Thermal emission and capture of electrons at sulfur centers in silicon

   Laurence Rosier, C. T. Sah

   Мақола19712 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.626285

3. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.626286

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.626287