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Иш: Investigation of the silicon ion density during molecular beam epitaxy growth

1. Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method

   Х. Б. Ашуров, Flyura Djurabekova, С. Е. Максимов +3

   МақолаIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20110 иқтибос

   ABIABI:AkademIndex/openalex/2011.article.000307