Ушбу иш иқтибос қилган ишлар

2 та иш

Иш: Influence of ion implantation and annealing on composition and structure of GaAs surface

1. Auger electron spectroscopy and electron energy loss spectroscopy studies of the formation of silicon nitride by implanting low energy nitrogen ions into silicon

   N. Lieske, Rudolf Hezel

   Мақола19813 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.212584

2. Interaction of Neutral Atoms with a Solid Surface

   U.A. Arifov

   Боб19692 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.668206