Мақола

Effect of Interlayer Exchange Coupling on the Curie Temperature in Ga<sub>1-x</sub>Mn<sub>x</sub>As Trilayer Structures

Sh. U. YuldashevQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaYongmin KimQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaNayoung KimQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaHyunsik ImQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaTae Won KangQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaSang‐Hoon LeeDepartment of Physics, Korea University, Seoul 136-701, KoreaYuji C. SasakiDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USAXin LiuDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USAJ. K. FurdynaDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

Japanese Journal of Applied Physicsjournal2004en

ABI

Аннотация

We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Ga 1- x Mn x As(Be)/GaAs/Ga 1- x Mn x As trilayer structures. The FM layers in the trilayers contained the same concentration of Mn ( x ≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga 0.954 Mn 0.046 As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Ga 0.954 Mn 0.046 As(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.

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Идентификаторлар

DOI: 10.1143/jjap.43.2093

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