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11 та иш

Иш: On the possibility of determining the diffusion length of excitons in semiconductors from photomagnetic measurement data

  1. Efficiency improvements of silicon solar cells by the impurity photovoltaic effect

    Mark Keevers, Martin A. Green

    Мақола199422 иқтибос
    ABI

  2. Semiconductor Physics

    Karlheinz Seeger

    Китоб19733 иқтибос
    ABI

  3. Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon

    Pietro P. Altermatt, Jan Schmidt, Gernot Heiser +1

    Мақола19972 иқтибос
    ABI

  4. Excitons in silicon diodes and solar cells: A three-particle theory

    Richard Corkish, Daniel S.-P. Chan, Martin A. Green

    Мақола19962 иқтибос
    ABI

  5. Non-radiative decay of excitons on ionized donors and acceptors in semi-conducting and dielectric crystals

    Miroslav Trlifaj

    Мақола19652 иқтибос
    ABI

  6. The non-radiative decay of free excitons as mediated by ionized donors in semiconductors

    Jai Singh, P Landsberg

    Мақола19762 иқтибос
    ABI

  7. Non-radiative ionization of perturbation centres by means of excitons in semi-conducting and dielectric crystals

    Miroslav Trlifaj

    Мақола19642 иқтибос
    ABI

  8. Exciton-stimulated modulation of recombination in solar cells

    Smagul Karazhanov

    МақолаChalcogenide Semiconductor Thin FilmsJournal of Applied Physics19971 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI