Ушбу иш иқтибос қилган ишлар

2 та иш

Иш: Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

1. The physics of semiconductor devices

   H. L. Grubin

   Мақола197918 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199254

2. The Pulsed MIS Capacitor. A Critical Review

   Jaehyeon Kang, D.K. Schroder

   Шарҳ мақола19857 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.527893