Мақола

Magneto‐transport properties of NiMnSb thin films on InSb single crystals: Negative giant magnetoresistance

S. GardelisIMEL, NCSR Demokritos, P.O. Box 60228, 15310 Athens, GreeceJohn AndroulakisInstitute of Electronic Structure and Laser, FORTH, P.O. Box 1527, Vassilika Vouton, 71110 Heraklion, Crete, GreeceZ. ViskadourakisInstitute of Electronic Structure and Laser, FORTH, P.O. Box 1527, Vassilika Vouton, 71110 Heraklion, Crete, GreeceEvie L. PapadopoulouInstitute of Electronic Structure and Laser, FORTH, P.O. Box 1527, Vassilika Vouton, 71110 Heraklion, Crete, GreeceJ. GiapintzakisDepartment of Mechanical and Manufacturing Engineering, University of Cyprus, P.O. Box 20537, 1678 Nicosia, CyprusSanjay RaiX-ray Optics Section, Synchrotron Utilization and Materials Research Devision, Centre for Advanced Technology, Indore 452013, IndiaG. S. LodhaX-ray Optics Section, Synchrotron Utilization and Materials Research Devision, Centre for Advanced Technology, Indore 452013, IndiaSthitadhi Roy

physica status solidi (a)journal2006en

ABI

Аннотация

Abstract In this study we investigated the magneto‐transport properties of the ohmic contact between polycrystalline NiMnSb thin films grown by pulsed laser deposition and n‐type degenerate InSb (100) substrates. An unusual negative giant magnetoresistance (n‐GMR) effect is found when the external magnetic field is parallel to the in‐plane current direction. A similar effect is also observed when Ni films are deposited on InSb substrates. On the other hand, no n‐GMR effect is displayed when the deposited film is nonmagnetic. Grazing‐incidence X‐ray reflectometry shows the formation of a low‐density NiMnSb layer at the interface. The presence of such a layer coincides with the appearance of the n‐GMR.We argue that the n‐GMR effect is due to magnetic precipitates formed at the interface during the growth of the magnetic films. We propose that these precipitates align their magnetic moments in the direction of the external magnetic field and thus, the spin dependent scattering of the electrons is reduced. The effect of these precipitates on the magnetoresistance depends on the thermal processing of the system. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Мавзулар

Magnetic properties of thin films Semiconductor Quantum Structures and Devices Heusler alloys: electronic and magnetic properties

Идентификаторлар

DOI: 10.1002/pssa.200673003

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