Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier
Nigmatulla YunusovTashkent University of Information Technologies, Tashkent, UzbekistanR.K. AtametovTashkent University of Information Technologies, Tashkent, UzbekistanSh.N. YuldashevaTashkent University of Information Technologies, Tashkent, Uzbekistan
2007en
ABI
Аннотация
The quantity ratio simulating the characteristics of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier as a power function of input optical radiation is presented in the work.
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