Nanostructuring of semiconductor surfaces under the action of femtosecond pulses
R. A. GaneevInstitute of Solid State Physics, University of Tokyo, Kashiwa, 277-8581, JapanTianqing JiaEast-China Normal University, Shanghai, China
ABI
Аннотация
The nanostructures with dimensions (110–250 nm), much smaller than the wavelength of laser light, obtained on surfaces of various semiconductors under the action of laser ablation by femtosecond pulses are studied. Nanostructures obtained at large angles of incidence and under the action of interference of two femtosecond pulses on the surface of the samples are analyzed.
Ҳали таржима қилинмаган
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
0 та иқтибос20 та фойдаланилган манба