Simulation of contact stiffness of a hemispherical island inclusion
G. S. BatogMoscow Physicotechnical Institute (State University), Dolgoprudny, Moscow oblast, 141700, RussiaA. S. BaturinMoscow Physicotechnical Institute (State University), Dolgoprudny, Moscow oblast, 141700, RussiaE.P. SheshinMoscow Physicotechnical Institute (State University), Dolgoprudny, Moscow oblast, 141700, Russia
ABI
Аннотация
Numerical analysis is carried out for constructing a model simulating the contact stiffness of a solitary hemispherical island inclusion in an infinitely extended substrate. The contact stiffness is measured using atomic force acoustic microscopy with tips having a constant contact radius. Finite element analysis using the isotropic model of the materials is employed for this purpose. The model can be used for studying nanocomposite materials.
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