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Optical FET output characteristics research in light-activated mode

D. M. YodgorovaPhysical-Technical Institute of the Scientific Association “Physics-Sun” of the Academy of Sceinces of the Republic of Uzbekistan, Tashkent, Uzbekistan
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This paper deals with researches of output characteristics of a field-controlled phototransistor with light excitation in a light-activated mode. Optical signal transformation mechanisms in a channel are determined, considering processes in a drain-gate junction. Criteria of base region effective modulation are specified. Obtained results can be used in design of new generation transistors.

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