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Ушбу иш иқтибос қилган ишлар

10 та иш

Иш: Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Китоб200258 иқтибос
    ABI

  2. Physics of Semiconductor Devices

    Samarth Jain, S. Radhakrishna

    Мақола198715 иқтибос
    ABI

  3. Surface barrier detectors using aluminum on n- and p-type silicon for α-spectroscopy

    H. Rahab, A. Keffous, H. Menari +3

    Мақола20013 иқтибос
    ABI

  4. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon

    G. Ottaviani, K. N. Tu, J. W. Mayer

    Мақола19812 иқтибос
    ABI

  5. Metal–semiconductor junctions on <i>p</i>-type strained Si1−<i>x</i>Ge<i>x</i> layers

    Omer Nur, M. Willander, Raşit Turan +2

    Мақола19962 иқтибос
    ABI

  6. Fabrication and characterization of Au/n-Si photodiode with lithium as back-surface-field

    A. Keffous, Marwa Zitouni, Y. Belkacem +2

    Мақола20022 иқтибос
    ABI

  7. Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures

    G. D. Scott, M. Xiao, H. W. Jiang +2

    Мақола20072 иқтибос
    ABI

  8. Modification of Al/Si interface and Schottky barrier height with chemical treatment

    Zs. J. Horváth, M. Ádám, I.A. Szabó +2

    Мақола20022 иқтибос
    ABI

  9. Electron-Hole Recombination in Germanium

    R. N. Hall

    Мақола19522 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа2 иқтибос
    ABI